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| Produsentdel | IPAN65R650CEXKSA1 |
|---|---|
| Produsent | IR (Infineon Technologies) |
| Beskrivelse | MOSFET N-CH 650V 10.1A TO220 |
| Kategori | diskrete halvlederprodukter |
| Familie | transistorer - fets, mosfets - single |
| Livssyklus: | New from this manufacturer. |
| Leveranse: | DHL FedEx Ups TNT EMS |
| innbetaling | T/T Paypal Visa MoneyGram Western Union |
| Dataark | IPAN65R650CEXKSA1 PDF |
| På lager | 186 540 |
|---|---|
| Enhetspris | $ 0.67888 |
IPAN65R650CEXKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
| Type | Beskrivelse |
|---|---|
| serie: | CoolMOS™ |
| pakke: | Tube |
| delstatus: | Active |
| fet type: | N-Channel |
| teknologi: | MOSFET (Metal Oxide) |
| drenere til kildespenning (vdss): | 650 V |
| strøm - kontinuerlig drenering (id) @ 25°c: | 10.1A (Tc) |
| drivspenning (maks rds på, min rds på): | 10V |
| rds på (maks) @ id, vgs: | 650mOhm @ 2.1A, 10V |
| vgs(th) (maks) @ id: | 3.5V @ 210µA |
| portlading (qg) (maks) @ vgs: | 23 nC @ 10 V |
| vgs (maks.): | ±20V |
| inngangskapasitans (ciss) (maks) @ vds: | 440 pF @ 100 V |
| fet funksjon: | Super Junction |
| effekttap (maks.): | 28W (Tc) |
| Driftstemperatur: | -40°C ~ 150°C (TJ) |
| monteringstype: | Through Hole |
| leverandørenhetspakke: | PG-TO220 Full Pack |
| pakke / etui: | TO-220-3 Full Pack |
We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.
We provide DHL, FedEx, UPS, EMS, SF Express, and Registered Air Mail international shipping.
TT in advance (bank transfer), Western Union,PayPal. Customer is responsible for shipping fee, bank charges, duties and taxes.
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